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| SUM110N02-03P New Product Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 20 FEATURES rDS(on) (W) ID (A)a 110a 110a 0.0032 @ VGS = 10 V 0.0052 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous Rectifier APPLICATIONS D Synchronous Buck DC/DC Conversion - Desktop - Server D Load Switch D TO-263 G DRAIN connected to TAB G DS S N-Channel MOSFET Top View SUM110N02-03P ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) _ Pulsed Drain Current Maximum Power Dissipationb Operating Junction and Storage Temperature Range TC = 25_C TA = 25_Cd TC = 25_C TC = 100_C Symbol VDS VGS ID IDM PD TJ, Tstg Limit 20 "20 110a 102 300 120c 3.75 -55 to 175 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Mount)d Symbol RthJA RthJC Limit 40 1.25 Unit _C/W _ Document Number: 72096 S-22451--Rev. A, 20-Jan-03 www.vishay.com 1 SUM110N02-03P Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 16 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V, TJ = 125_C VDS = 16 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A VGS = 10 V, ID = 30 A, TJ = 125_C Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 175_C VGS = 4.5 V, ID = 20 A Forward Transconductancea gfs VDS = 15 V, ID = 30 A 15 0.0042 120 0.0026 0.0032 0.0048 0.0055 0.052 S W 20 V 0.8 3 "100 1 50 250 A m mA nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargeb Gate-Source Chargeb Gate-Drain Chargeb Gate Resistance Turn-On Delay Timeb Rise Timeb Ciss Coss Crss Qg Qgs Qgd RG td(on) tr td(off) tf VDD = 10 V, RL = 0.2 W ID ^ 110 A, VGEN = 10 V, RG = 2.5 W VDS = 10V, VGS = 4.5 V, ID = 110 A VGS = 0 V, VDS = 10 V, f = 1 MHz 5100 1650 750 40 14 13 0.85 15 11 45 10 25 20 70 15 ns W 60 nC pF Turn-Off Delay Timeb Fall Timeb Source-Drain Diode Ratings and Characteristics (TC = 25_C)c Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM Qrr IF = 50 A, di/dt = 100 A/ms m IF = 110 A, VGS = 0 V 1.1 45 1.8 0.041 110 300 1.5 70 2.7 0.095 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 72096 S-22451--Rev. A, 20-Jan-03 SUM110N02-03P New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 250 Vishay Siliconix Output Characteristics VGS = 10 thru 5 V 200 Transfer Characteristics 200 I D - Drain Current (A) I D - Drain Current (A) 160 4V 150 120 100 80 TC = 125_C 40 -55 _C 25_C 50 3V 0 0 2 4 6 8 10 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 200 TC = -55_C r DS(on) - On-Resistance ( W ) 160 g fs - Transconductance (S) 25_C 120 125_C 80 0.0045 0.0060 On-Resistance vs. Drain Current VGS = 4.5 V 0.0030 VGS = 10 V 0.0015 40 0 0 15 30 ID - Drain Current (A) 45 60 0.0000 0 20 40 60 80 100 ID - Drain Current (A) Capacitance 7000 6000 Ciss C - Capacitance (pF) 5000 4000 3000 2000 Crss 1000 0 0 5 10 15 20 Coss 10 Gate Charge V GS - Gate-to-Source Voltage (V) 8 VDS = 10 V ID = 50 A 6 4 2 0 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Document Number: 72096 S-22451--Rev. A, 20-Jan-03 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM110N02-03P Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 1.8 VGS = 10 V ID = 30 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.6 r DS(on) - On-Resistance (W) (Normalized) 1.4 TJ = 150_C 10 TJ = 25_C 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature 30 28 V (BR)DSS (V) ID = 10 mA 26 24 22 20 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72096 S-22451--Rev. A, 20-Jan-03 SUM110N02-03P New Product THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 120 1000 Limited by rDS(on) 100 I D - Drain Current (A) 80 I D - Drain Current (A) 10 ms 100 ms Vishay Siliconix Safe Operating Area 100 60 10 40 1 ms 10 ms 100 ms dc TC = 25_C Single Pulse 1 20 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (sec) Document Number: 72096 S-22451--Rev. A, 20-Jan-03 www.vishay.com 5 |
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